Sintered oxide compact target for sputtering and process for producing the same
US9045823B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2009 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Aug 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B1/08
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a sintered oxide compact target for sputtering comprising indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the composition ratio of the respective elements satisfies the Formula of InxGayZnzOa {wherein 0.2≦x/(x+y)≦0.8, 0.1≦z/(x+y+z)≦0.5, a=(3/2)x+(3/2)y+z}, and the number of ZnGa2O4 spinel phases having a grain size of 3 μm or larger existing in a 90 μm×90 μm area range of the sintered oxide compact target is 10 or less. With this sintered oxide compact target for sputtering comprising In, Ga, Zn, O and unavoidable impurities, the structure of the sintered compact target is improved, the formation of a phase to become the source of nodules is minimized, and the bulk resistance value is reduced. Whereby provided is a high density IGZO target capable of inhibiting abnormal discharge and which can be used in DC sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.