Patent · US Active

Structure and method for reflective-type mask

US9046781B2 · kind B2 · utility

1Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 17, 2013
Grant dateJun 2, 2015
Priority date
Expiry dateNov 29, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/20
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer formed on the substrate; a capping layer formed on the reflective multilayer and having a hardness greater than about 8; and an absorber layer formed on the capping layer and patterned according to an integrated circuit layout.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.