Method of etching
US9048066B2 · kind B2 · utility
1Cited by
0References
12Claims
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Key dates
| Filing date | Jul 3, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Sep 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method is for etching successive substrates on a platen in an inductively coupled plasma chamber in which the etching process results in carbonaceous deposits in the chamber. The method includes (a) interrupting the etching processing of substrates, (b) running an oxygen or oxygen containing plasma within the chamber and removing gaseous by-products, and (c) resuming the etch processing of substrates. The method is characterized in that it further includes the step of running an argon plasma in the chamber after step (b) with the platen biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.