SiC single crystal, SiC wafer, and semiconductor device
US9048102B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 3, 2012 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Dec 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An SiC single crystal includes a low dislocation density region (A) where the density of dislocations each of which has a Burgers vector in a {0001} in-plane direction (mainly a direction parallel to a <11-20> direction) is not more than 3,700 cm/cm3. Such an SiC single crystal is obtained by: cutting out a c-plane growth seed crystal of a high offset angle from an a-plane grown crystal; applying c-plane growth so that the density of screw dislocations introduced into a c-plane facet may fall in a prescribed range; cutting out a c-plane growth crystal of a low offset angle from the obtained c-plane grown crystal; and applying c-plane growth so that the density of screw dislocations introduced into a c-plane facet may fall in a prescribed range. An SiC wafer and a semiconductor device are obtained from such an SiC single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.