Method of forming a gate contact
US9048184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Jul 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a gate contact for a compound semiconductor device. The gate contact is formed from a gate contact portion and a top or wing contact portion. The method allows for the tunablity of the size of the wing contact portion, while retaining the size of the gate contact portion based on a desired operational frequency. This is accomplished by providing for one or more additional conductive material processes on the wing contact portion to increase the cross-sectional area of the wing contact portion reducing the gate resistance, while maintaing the length of the gate contact portion to maintain the operating frequency of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.