Michael Wojtowicz
11Patents
5h-index
17Co-inventors
59Inventor score
Filing activity: Mar 25, 1999 → Mar 15, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6515316B1 | Partially relaxed channel HEMT device | Electricity | 51 | Expired |
| US8575657B2 | Direct growth of diamond in backside vias for GaN HEMT devices | Electricity | 13 | Active |
| US7041579B2 | Hard substrate wafer sawing process | Electricity | 7 | Expired |
| US6245687A | Precision wide band gap semiconductor etching | Electricity | 5 | Expired |
| US8026132B2 | Leakage barrier for GaN based HEMT active device | Electricity | 5 | Active |
| US6710379B2 | Fully relaxed channel HEMT device | Electricity | 3 | Expired |
| US6528829B1 | Integrated circuit structure having a charge injection barrier | Electricity | 0 | Expired |
| US8809907B2 | Leakage barrier for GaN based HEMT active device | Electricity | 0 | Expired |
| US7608865B1 | Club extension to a T-gate high electron mobility transistor | Electricity | 0 | Active |
| US8809137B2 | Leakage barrier for GaN based HEMT active device | Electricity | 0 | Active |
| US9048184B2 | Method of forming a gate contact | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.