Semiconductor device and method of fabricating the same
US9048236B2 · kind B2 · utility
1Cited by
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18Claims
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Key dates
| Filing date | Jul 22, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Aug 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
A semiconductor device includes an interlayer insulating film formed on a substrate, the insulating layer including a trench. A gate insulating layer is formed on a bottom surface of the trench and a reaction prevention layer is formed on the gate insulating layer on the bottom surface of the trench. A replacement metal gate structure is formed on the reaction prevention layer of the trench to fill the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.