Method for manufacturing a marked single-crystalline substrate and semiconductor device with marking
US9048244B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 2014 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Oct 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a marked single-crystalline substrate comprises providing a single-crystalline substrate comprising a first material, the single-crystalline substrate having a surface area; forming a marking structure on the surface area of the single-crystalline substrate, wherein the marking structure comprises a first semiconductor material; and depositing a semiconductor layer on the marking structure and at least partially on the surface area of the single-crystalline substrate, wherein the semiconductor layer comprises the second semiconductor material, and wherein the marking structure is buried under the second semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.