Graphene switching device having tunable barrier
US9048310B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 12, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Aug 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.