Magnetic memory devices including magnetic layers separated by tunnel barriers
US9048412B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2014 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Mar 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3236
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.