Patent · US Active

Detecting defects on a wafer

US9053527B2 · kind B2 · utility

63Cited by
273References
51Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 2, 2013
Grant dateJun 9, 2015
Priority date
Expiry dateAug 6, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06T2207/30148
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Methods and systems for detecting defects on a wafer are provided. One method includes identifying one or more characteristics of first raw output generated for a wafer that correspond to one or more geometrical characteristics of patterned features formed on the wafer and assigning individual output in second raw output generated for the wafer to different segments based on the identified one or more characteristics of the first raw output and based on the individual output in the second raw output and individual output in the first raw output that were generated at substantially the same locations on the wafer such that the one or more geometrical characteristics of the patterned features that correspond to each of the different segments in the second raw output are different.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.