Patent · US Active

Ferroelectric memory cell for an integrated circuit

US9053802B2 · kind B2 · utility

23Cited by

3References

26Claims

0Family size

Assignee

NAMLAB GGMBH · DE

Inventors

Stefan Müller · Wetzlar, DE
Ekaterina Yurchuk · Dresden, DE
Uwe Schroder · Dresden, DE

Key dates

Filing date	Jun 4, 2013
Grant date	Jun 9, 2015
Priority date	—
Expiry date	Aug 18, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/2273
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An integrated circuit includes a ferroelectric memory cell. In one embodiment, the ferroelectric memory cell includes a first oxide storage layer, a second oxide storage layer, and an amorphous layer disposed between the first and second oxide storage layers. Each of the first and second oxide storage layers includes a ferroelectric material that is at least partially in a ferroelectric state and further includes, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.