Flash memory with targeted read scrub algorithm
US9053808B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2012 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Jul 13, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system have been described for counteracting and correcting for read disturb effects in blocks of flash memory. The method may include the step of a controller of the memory system performing a read scrub scan on only a portion of one targeted word line in a block at desired intervals. The controller may calculate whether a read scrub scan is necessary based on a probabilistic determination that is calculated in response to each received host read command. The controller may then place a block associated with the targeted word line into a refresh queue if a number of errors are detected in the targeted word line that meets or exceeds a predetermined threshold. The block refresh process may include copying the data from the block into a new block during a background operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.