Method and system for integrated MEMS and NEMS using deposited thin films having pre-determined stress states
US9053929B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2011 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | May 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2855
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and system are disclosed for controlling the state of stress in deposited thin films on microelectronics wafers for the integration of MEMS and NEMS devices with microelectronics. According to the method and system, various process parameters including: process pressure; substrate temperature; deposition rate; and ion-beam energies (controlled via the ion beam current, voltage, signal frequency and duty cycle) are varied using a step-by-step methodology to arrive at a pre-determined desired state of stress in thin films deposited using PVD at low temperatures and desired stress states onto wafers or substrates having microelectronics processing performed on them.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.