Methods of preparing graphene and device including graphene
US9053932B2 · kind B2 · utility
6Cited by
0References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2013 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Jun 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.