Transistors and fabrication method

US9054021B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International Corp. · CN

Inventors

• Deyuan Xiao · Shanghai, CN
• Emily Shu · Niskayuna, US

Key dates

• Filing date: Mar 15, 2013
• Grant date: Jun 9, 2015
• Expiry date: Mar 15, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate, and forming a metal layer on the semiconductor substrate. The method also includes forming a silicon layer having at least one layer of graphene-like silicon on the metal layer, and forming a metal oxide layer by oxidizing a portion of the metal layer underneath the silicon layer. Further, the method includes forming a source region and a drain region connecting with the silicon layer.