Methods for manufacturing and manipulating semiconductor structure having active device
US9054026B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2014 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Apr 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
A semiconductor structure comprising a substrate, an active device, a field oxide layer and a poly-silicon resistor is disclosed. The active device is formed in a surface area of the substrate. The active device has a first doped area, a second doped area and a third doped area. The second doped area is disposed on the first doped area. The first doped area is between the second and the third doped areas. The first doped area has a first type conductivity. The third doped area has a second type conductivity. The first and the second type conductivities are different. The field oxide layer is disposed on a part of the third doped area. The poly-silicon resistor is disposed on the field oxide layer and is electrically connected to the third doped area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.