Method of manufacturing semiconductor device and method of processing substrate
US9054046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2012 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Dec 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02189
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film including characteristics of low permittivity, high etching resistance and high leak resistance is to be formed. A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; and forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.