Semiconductor device
US9054085B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2014 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Sep 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a fin-shaped silicon layer on a semiconductor substrate and extending in a first direction and a first insulating film around the fin-shaped semiconductor layer. A pillar-shaped silicon layer resides on the fin-shaped silicon layer. A width of the pillar-shaped semiconductor layer, perpendicular to the first direction is equal to a width of the fin-shaped semiconductor layer perpendicular to the first direction. A gate insulating film is around the pillar-shaped semiconductor layer and a metal gate electrode is around the gate insulating film. A metal gate line extends in a second direction perpendicular to the first direction of the fin-shaped semiconductor layer and is connected to the metal gate electrode. A metal gate pad is connected to the metal gate line, where the width of the metal gate electrode and the width of the metal gate pad are larger than the width of the metal gate line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.