Method for manufacturing semiconductor device
US9054206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2008 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Aug 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.