Semiconductor devices having fin structures and fabrication methods thereof

US9054219B1 · kind B1 · utility

Assignee

• Mie Fujitsu Semiconductor Limited · JP

Inventors

• Thomas Hoffmann · Santa Cruz, US
• Scott E. Thompson · Gainesville, US

Key dates

• Filing date: Feb 5, 2014
• Grant date: Jun 9, 2015
• Expiry date: Feb 5, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/011

Abstract

A method of fabricating semiconductor devices includes providing a semiconducting substrate. The method also includes defining a heavily doped region at a surface of the semiconducting substrate in at least one area of the semiconducting substrate, where the heavily doped region includes a heavily doped layer having a doping concentration greater than a doping concentration of the semiconducting substrate. The method also includes forming an additional layer of semiconductor material on the semiconducting substrate, the additional layer comprising a substantially undoped layer. The method further includes applying a first removal process to the semiconducting substrate to define an unetched portion and an etched portion, where the unetched portion defines a fin structure, and the etched portion extends through the additional layer, and then isolating the fin structure from other structures.