Thermally assisted MRAM with a multilayer encapsulant for low thermal conductivity
US9054300B2 · kind B2 · utility
8Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Aug 20, 2013 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Aug 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A technique is provided for a thermally assisted magnetoresistive random access memory device. A magnetic tunnel junction is formed. Contact wiring having a top contact electrode and a bottom contact electrode is formed. The contact wiring provides write bias to heat the magnetic tunnel junction. A multilayer dielectric encapsulant is configured to retain the heat within the magnetic tunnel junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.