Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate
US9057147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2014 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Apr 11, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon carbide epitaxial substrate having a main surface (second main surface) includes: a base substrate; and a silicon carbide epitaxial layer formed on the base substrate and including the main surface (second main surface), the second main surface having a surface roughness of 0.6 nm or less, a ratio of standard deviation of a nitrogen concentration in the silicon carbide epitaxial layer at a surface layer including the main surface (second main surface) within a plane of the silicon carbide epitaxial substrate to an average value of the nitrogen concentration in the silicon carbide epitaxial layer at the surface layer within the plane of the silicon carbide epitaxial substrate being 15% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.