Transmission electron microscope sample fabrication
US9057670B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2013 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Jun 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of preparing a transmission electron microscopy (TEM) sample from a semiconductor structure may include milling a region of the semiconductor structure with a focused ion beam and generating the transmission electron microscopy (TEM) sample. The focused ion beam providing the milling may include a rotation angle relative to the crystallographic axis of the semiconductor structure. A transmission electron microscopy image of a cross-sectional plane of the generated transmission electron microscopy (TEM) sample may be generated using a transmission electron microscope, whereby the transmission electron microscopy image of the cross-sectional plane includes an image projection-free region based on the rotation angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.