James J. Demarest
45Patents
8h-index
56Co-inventors
74Inventor score
Filing activity: Apr 19, 2004 → Dec 17, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9666528B1 | BEOL vertical fuse formed over air gap | Electricity | 403 | Active |
| US7402532B2 | Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer | Electricity | 24 | Active |
| US9449871B1 | Hybrid airgap structure with oxide liner | Electricity | 12 | Active |
| US7102232B2 | Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer | Electricity | 11 | Expired |
| US8796128B2 | Dual metal fill and dual threshold voltage for replacement gate metal devices | Electricity | 9 | Active |
| US7122898B1 | Electrical programmable metal resistor | Electricity | 8 | Expired |
| US8889564B2 | Suspended nanowire structure | Emerging Cross-Sectional Technologies | 8 | Active |
| US9780027B2 | Hybrid airgap structure with oxide liner | Electricity | 8 | Active |
| US10043746B1 | Fabrication of vertical fuses from vertical fins | Electricity | 7 | Active |
| US9985097B2 | Integrated capacitors with nanosheet transistors | Electricity | 5 | Active |
| US8629007B2 | Method of improving replacement metal gate fill | Electricity | 5 | Active |
| US9057670B2 | Transmission electron microscope sample fabrication | Electricity | 4 | Active |
| US7820559B2 | Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layer | Electricity | 3 | Active |
| US7287325B2 | Method of forming interconnect structure or interconnect and via structures using post chemical mechanical polishing | Emerging Cross-Sectional Technologies | 3 | Expired |
| US9978560B2 | System and method for performing nano beam diffraction analysis | Electricity | 2 | Active |
| US10319677B2 | Fabrication of vertical fuses from vertical fins | Electricity | 2 | Active |
| US7835564B2 | Non-destructive, below-surface defect rendering using image intensity analysis | Electricity | 2 | Active |
| US9953915B2 | Electrically conductive interconnect including via having increased contact surface area | Electricity | 2 | Active |
| US9553044B2 | Electrically conductive interconnect including via having increased contact surface area | Electricity | 2 | Active |
| US9793213B2 | Ion flow barrier structure for interconnect metallization | Electricity | 2 | Active |
| US9978678B1 | Vertically integrated nanosheet fuse | Electricity | 2 | Active |
| US10475878B2 | BEOL capacitor through airgap metallization | Electricity | 1 | Active |
| US10170548B2 | Integrated capacitors with nanosheet transistors | Electricity | 1 | Active |
| US10043748B1 | Vertically integrated nanosheet fuse | Electricity | 1 | Active |
| US9406790B2 | Suspended ring-shaped nanowire structure | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.