Memory element having ion source layers with different contents of a chalcogen element
US9058873B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2012 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Oct 16, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/55
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.