Semiconductor device and method for manufacturing same
US9059028B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2010 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Jun 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
The objective of the present invention is to provide a semiconductor device provided with a resistance-variable element having sufficient switching property and exhibiting high reliability and high densification as well as good insulating property.The present invention provides a semiconductor device comprising a resistance-variable element provided within multiple wiring layers on a semiconductor substrate, wherein the resistance-variable element comprises a laminated structure in which a first electrode, a first ion-conductive layer of valve-metal oxide film, a second ion-conductive layer containing oxygen and a second electrode are laminated in this order, and the wiring of the multiple wiring layers also serves as the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.