Reducing wafer bonding misalignment by varying thermal treatment prior to bonding
US9059039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2013 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Sep 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L24/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonding layer of the first wafer article is thermally treated and a bonding layer of a second wafer article is thermally treated in accordance with first and second process parameters, respectively prior to bonding the first wafer article with the second wafer article. First and second grid distortion in the first and second wafer articles is measured and a difference is determined between the first and second grid distortions. A prediction is made for maintaining the difference within a prescribed tolerance. At least one of the first process parameters and the second process parameters can be conditionally varied in accordance with the prediction. The thermally treating of the first wafer article and the thermally treating of the second wafer article can then be performed with respect to another pair of the first and second wafer articles prior to bonding the another pair of wafer articles to one another through their respective bonding layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.