Patent · US Active

Semiconductor packages and methods of fabricating the same

US9059072B2 · kind B2 · utility

3Cited by
11References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 2, 2014
Grant dateJun 16, 2015
Priority date
Expiry dateJun 2, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18161
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided are a semiconductor package and a method of fabricating the same. In one embodiment, to fabricate a semiconductor package, a wafer having semiconductor chips fabricated therein is provided. A heat sink layer is formed over the wafer. The heat sink layer contacts top surfaces of the semiconductor chips. Thereafter, the plurality of semiconductor chips are singulated from the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.