Selectively doped semi-conductors and methods of making the same
US9059081B2 · kind B2 · utility
0Cited by
8References
5Claims
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Assignee
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Key dates
| Filing date | Nov 13, 2007 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Feb 18, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is generally directed to methods of selectively doping a substrate and the resulting selectively doped substrates. The methods include doping an epilayer of a substrate with the selected doping material to adjust the conductivity of either the epilayers grown over a substrate or the substrate itself. The methods utilize lithography to control the location of the doped regions on the substrate. The process steps can be repeated to form a cyclic method of selectively doping different areas of the substrate with the same or different doping materials to further adjust the properties of the resulting substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.