Source and drain doping profile control employing carbon-doped semiconductor material

US9059292B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Viorel Ontalus · Danbury, US
• Pranita Kulkarni · Slingerlands, US
• Donald R. Wall · Poughkeepsie, US
• Zhengmao Zhu · Poughkeepsie, US

Key dates

• Filing date: Aug 2, 2012
• Grant date: Jun 16, 2015
• Expiry date: Dec 6, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

Carbon-doped semiconductor material portions are formed on a subset of surfaces of underlying semiconductor surfaces contiguously connected to a channel of a field effect transistor. Carbon-doped semiconductor material portions can be formed by selective epitaxy of a carbon-containing semiconductor material layer or by shallow implantation of carbon atoms into surface portions of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions can be deposited as layers and subsequently patterned by etching, or can be formed after formation of disposable masking spacers. Raised source and drain regions are formed on the carbon-doped semiconductor material portions and on physically exposed surfaces of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions locally retard dopant diffusion from the raised source and drain regions into the underlying semiconductor material regions, thereby enabling local tailoring of the dopant profile, and alteration of device parameters for the field effect transistor.