Method of manufacturing dummy gates of a different material as insulation between adjacent devices
US9059308B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2012 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Dec 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
Abstract
Embodiments of the present invention include a semiconductor structure including two transistor structures separated by a dummy gate of a different material and methods for forming said structure. Embodiments including forming sacrificial gates on a semiconductor substrate, forming spacers on the sacrificial gates, forming source/drain regions adjacent to two sacrificial gates separated by a third sacrificial gate, and replacing the third sacrificial gate with an insulating material. The insulating material replacing the third sacrificial gate may serve as a dummy gate to electrically isolate nearby source/drain regions. Embodiments further include forming sacrificial gates on a semiconductor substrate, forming spacers on the sacrificial gates, forming source/drain regions adjacent to two sacrificial gates separated by a third sacrificial gate, and replacing the two sacrificial gates with metal gates while leaving the third sacrificial gate in place to serve as a dummy gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.