Inventor · Newburgh, NY, US

Cung D. Tran

32Patents
7h-index
47Co-inventors
65Inventor score

Filing activity: Jan 7, 2008 → Sep 17, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US8415250B2 Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device Electricity 34 Active
US9305835B2 Formation of air-gap spacer in transistor Electricity 25 Active
US8643122B2 Silicide contacts having different shapes on regions of a semiconductor device Electricity 19 Active
US9312185B2 Formation of metal resistor and e-fuse Electricity 11 Active
US9111962B1 Selective dielectric spacer deposition for exposing sidewalls of a finFET Electricity 10 Active
US8603881B1 Raised trench metal semiconductor alloy formation Electricity 10 Active
US9691658B1 Contact fill in an integrated circuit Electricity 9 Active
US9349836B2 Fin end spacer for preventing merger of raised active regions Electricity 6 Active
US8236637B2 Planar silicide semiconductor structure Electricity 6 Active
US8796099B2 Inducing channel strain via encapsulated silicide formation Electricity 5 Active
US9530684B2 Method and structure to suppress finFET heating Electricity 2 Active
US9331166B2 Selective dielectric spacer deposition for exposing sidewalls of a finFET Electricity 2 Active
US8603915B2 Multi-stage silicidation process Electricity 1 Active
US8492275B2 Method to form uniform silicide by selective implantation Electricity 0 Active
US8298934B2 Structure and method of creating entirely self-aligned metallic contacts Electricity 0 Active
US8652963B2 MOSFET integrated circuit with uniformly thin silicide layer and methods for its manufacture Electricity 0 Active
US9368493B2 Method and structure to suppress FinFET heating Electricity 0 Active
US10833022B2 Structure and method to improve overlay performance in semiconductor devices Electricity 0 Active
US9397181B2 Diffusion-controlled oxygen depletion of semiconductor contact interface Electricity 0 Active
US9514992B2 Unidirectional spacer in trench silicide Electricity 0 Active
US9472415B2 Directional chemical oxide etch technique Electricity 0 Active
US9391175B2 Fin end spacer for preventing merger of raised active regions Electricity 0 Active
US7964923B2 Structure and method of creating entirely self-aligned metallic contacts Electricity 0 Active
US9059308B2 Method of manufacturing dummy gates of a different material as insulation between adjacent devices Electricity 0 Active
US8946081B2 Method for cleaning semiconductor substrate Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.