Optoelectronic component
US9059353B2 · kind B2 · utility
3Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2012 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Aug 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of Inx1Aly1Ga1-x1-y1N, wherein 0≦x1≦1, 0≦y1≦1 and x1+y1≦1, and at least one quantum well layer composed of Inx2Aly2Ga1-x2-y2N, wherein 0≦x2≦1, 0≦y2≦1 and x2+y2≦1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.