Patent · US Active

Optoelectronic component

US9059353B2 · kind B2 · utility

3Cited by
6References
16Claims
0Family size

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Key dates

Filing dateAug 30, 2012
Grant dateJun 16, 2015
Priority date
Expiry dateAug 30, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/833
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of Inx1Aly1Ga1-x1-y1N, wherein 0≦x1≦1, 0≦y1≦1 and x1+y1≦1, and at least one quantum well layer composed of Inx2Aly2Ga1-x2-y2N, wherein 0≦x2≦1, 0≦y2≦1 and x2+y2≦1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.