Laterally injected light-emitting diode and laser diode
US9059356B1 · kind B1 · utility
5Cited by
3References
25Claims
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Key dates
| Filing date | Nov 20, 2014 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Nov 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.