Deposition of high vapor pressure materials
US9062369B2 · kind B2 · utility
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34References
16Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 24, 2010 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Nov 27, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.