Low-dimensional material chemical vapor sensors

US9063063B2 · kind B2 · utility

Assignee

• United States of America as represented by the Secretary of the Air Force · US

Inventors

• Adam L. Friedman · Silver Spring, US
• F. Keith Perkins · Alexandria, US
• Enrique Cobas · Capitol Heights, US
• Paul M. Campbell · Alexandria, US
• Glenn G. Jernigan · Waldorf, US
• Berend T. Jonker · Waldorf, US

Key dates

• Filing date: Nov 8, 2013
• Grant date: Jun 23, 2015
• Expiry date: Nov 8, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T436/174614
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS2, applying the monolayer flakes of MoS2 onto a SiO2/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoS2 sensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS2, trenches in the SiO2/Si wafer, metal contacts in the trenches, and thereby resulting in a MoS2 sensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS2, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.