Magnetic etch-stop layer for magnetoresistive read heads
US9064507B1 · kind B1 · utility
5Cited by
612References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Nov 22, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3929
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A tunneling magnetoresistive read head produced thereby are disclosed. A shield layer is provided. A magnetic etch-stop layer is formed over the shield layer, where the magnetic etch-stop layer comprises a nonmagnetic metal and a soft magnetic material with overall property still being magnetically soft. A sensor stack is formed over the magnetic etch-stop layer. A patterned mask layer is formed over the sensor stack. Material from a portion of the sensor stack not covered by the patterned mask is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.