Variable resistive memory device and method of fabricating and driving the same
US9064564B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Feb 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a variable resistive memory device, and methods of fabricating and driving the same. The variable resistive memory device includes a plurality of memory cells arranged in a first direction and in a second direction different from the first direction, each of the plurality of memory cells comprising a variable resistor and a selection device serially connected to the variable resistor. A common wiring is electrically connected to first ends of the plurality of memory cells to apply a common reference voltage. Each wiring line of a plurality of wiring lines is electrically connected to second ends of the plurality of memory cells arranged n the plurality of rows oriented in the first direction. A plurality of selection lines are respectively connected to the selection devices of the plurality of memory cells to select any one of the plurality of memory cells via the plurality of wiring lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.