Nonvolatile semiconductor memory device and write-in method thereof
US9064580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2012 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | May 12, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device includes a non-volatile memory cell array and a control circuit for controlling writing-in to the memory cell array. In the stage before an erasing pulse adding in an erasing process where data of written-in memory cells is erased, the control circuit detects a programming speed when writing-in to the memory cell array, determines a programming start voltage corresponding to the programming speed for every block or every word line, stores the determined programming start voltage in the memory cell array and reads-out the programming start voltage from the memory cell array to write-in predetermined data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.