Semiconductor device and method for fabricating semiconductor device
US9064711B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2011 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Jun 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device in which a lifetime control region can be formed within a predetermined range with high positioning accuracy is provided. In a semiconductor device, an IGBT element region and a diode element region may be formed in one semiconductor substrate. The IGBT element region may include a second conductivity type drift layer and a first conductivity type body layer. The diode element region may include a second conductivity type drift layer and a first conductivity type anode layer. A concentration of heavy metal included in the drift layer of the diode element region may be set higher than a concentration of the heavy metal included in the drift layer of the IGBT element region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.