Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
US9064762B2 · kind B2 · utility
13Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 20, 2009 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Aug 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A solid-state imaging device includes, on a semiconductor substrate, a pixel portion having a plurality of pixels provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain a signal charge and a pixel transistor portion, which converts the signal charge read from the photoelectric conversion portion to a voltage, wherein an element isolation region disposed in the pixel portion includes an insulating film buried in a trench disposed in the semiconductor substrate, and the insulating film includes an insulating film having a negative charge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.