Graphene switching device having tunable barrier
US9064777B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2012 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Aug 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to example embodiments, a graphene switching devices has a tunable barrier. The graphene switching device may include a gate substrate, a gate dielectric on the gate substrate, a graphene layer on the gate dielectric, a semiconductor layer and a first electrode sequentially stacked on a first region of the graphene layer, and a second electrode on a second region of the graphene layer. The semiconductor layer may be doped with one of an n-type impurity and a p-type impurity. The semiconductor layer may face the gate substrate with the graphene layer being between the semiconductor layer and the gate substrate. The second region of the graphene layer may be separated from the first region on the graphene layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.