Semiconductor structure and method for making same

US9064875B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jakob Kriz · Ochtrup, DE
• Norbert Urbansky · Dresden, DE

Key dates

• Filing date: Nov 21, 2011
• Grant date: Jun 23, 2015
• Expiry date: Nov 21, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/01079
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments relate to a method for making a semiconductor structure, the method comprising: forming a seed layer in direct contact with a dielectric material; forming a masking layer over the seed layer; patterning the masking layer to expose the seed layer; forming a fill layer over the exposed seed layer; and causing the seed layer to react with the dielectric layer to form a barrier layer between the fill layer and the dielectric layer.