Semiconductor structure
US9064963B2 · kind B2 · utility
0Cited by
1References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2007 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Aug 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate, an undoped GaP insulating layer formed over the substrate, and a semiconductor layer formed over the GaP layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.