Graphene sensor

US9068936B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Dechao Guo · Niskayuna, US
• Shu-Jen Han · Somers, US
• Chung-Hsun Lin · White Plains, US
• Ning Su · Hopewell Junction, US

Key dates

• Filing date: Sep 6, 2012
• Grant date: Jun 30, 2015
• Expiry date: Sep 17, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/221
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.