Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradient

US9070580B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Armin Willmeroth · Friedberg, DE
• Markus Schmitt · Neubiberg, DE
• Winfried Kaindl · Unterhaching, DE
• Hans Weber · Villach, AT

Key dates

• Filing date: May 1, 2013
• Grant date: Jun 30, 2015
• Expiry date: May 1, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A super junction structure is formed in a semiconductor portion of a super junction semiconductor device. The super junction structure includes a compensation structure with a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type. The compensation structure lines at least sidewall portions of compensation trenches that extend between semiconductor mesas along a vertical direction perpendicular to a first surface of the semiconductor portion. Within the super junction structure and a pedestal layer that may adjoin the super junction structure, a sign of a lateral compensation rate changes along the vertical direction resulting in a local peak of a vertical electric field gradient and to improved avalanche ruggedness.