Adjusting intensity of laser beam during laser operation on a semiconductor device
US9070591B2 · kind B2 · utility
0Cited by
5References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 24, 2012 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Jan 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.