Terminal structure and semiconductor device
US9070606B2 · kind B2 · utility
1Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2013 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Aug 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a terminal structure comprising: a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, a height Hbm at which the bump has a maximum diameter (Lbm) is lower than a maximum height Hu of the under-bump metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.