Patent · US Active

Manufacturing of electronic devices in a wafer of semiconductor material having trenches with different directions

US9070694B2 · kind B2 · utility

0Cited by

1References

15Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Angelo Magri · Mascalucia, IT
Francesco Lizio · Catania, IT

Key dates

Filing date	Dec 17, 2013
Grant date	Jun 30, 2015
Priority date	—
Expiry date	Dec 17, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for integrating a set of electronic devices on a wafer (100; 200a; 200b) of semiconductor material having a main surface includes forming a plurality of trenches extending into the wafer from the main surface. At least one layer of electrically insulating material is formed within each trench. At least one layer of electrically conductive material is formed within each trench superimposed on the at least one layer of insulating material. The formation of the plurality of trenches includes forming the trenches partitioned into sub-sets of trenches. The trenches of a first sub-set are oriented along a first common direction that is different from the orientation of the trenches of a second sub-set.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.